Infineon IKW40N120T2FKSA1

1200 V75 A5.25mJ-40°C ~ 175°C（TJ）TO-247-3

Overview

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• Maximum junction temperature 175°C

Features

• EMI is low.

• Gate Charge Is Low

• Anti-parallel Emitter Controlled HE Diode with a soft, quick recovery

• Qualified for target applications according to JEDEC1

• Lead plating free of pb; RoHS compliance

Applications

Switching applications