Infineon IKW40N120H3FKSA1

1200 V80 A4.4mJ-40°C ~ 175°C（TJ）TO-247-3

Overview

The IKW40N120H3FKSA1 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

Features

TrenchStop® Series
Tube Package
Trench Field Stop IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
80 A Current - Collector (Ic) (Max)
160 A Current - Collector Pulsed (Icm)
2.4V @ 15V, 40A Vce(on) (Max) @ Vge, Ic
483 W Power - Max
4.4mJ Switching Energy
Standard Input Type
185 nC Gate Charge
30ns/290ns Td (on/off) @ 25°C
600V, 40A, 12Ohm, 15V Test Condition
355 ns Reverse Recovery Time (trr)
Through Hole Mounting Type