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IKW40N120CS6XKSA1

Infineon IKW40N120CS6XKSA1

1200 V80 A2.55mJ(开),1.55mJ(关)-40°C ~ 175°C(TJ)TO-247-3

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IKW40N120CS6XKSA1
IGBT TRENCH/FS 1200V 80A TO247-3
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¥35.35

价格更新:一个月前

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产品详情

Overview

IKW30N65NL5XKSA1 with pin details, that includes TrenchStop? 5 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IKW30N65NL5 SP001174466, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is PG-TO247-3, the device is offered in Single Configuration, the device has a 227W of Power Max, and Reverse Recovery Time trr is 59ns, and the Current Collector Ic Max is 85A, and Voltage Collector Emitter Breakdown Max is 650V, and the Current Collector Pulsed Icm is 120A, and Vce on Max Vge Ic is 1.35V @ 15V, 30A, and the Switching Energy is 560μJ (on), 1.35mJ (off), and Gate Charge is 168nC, and the Td on off 25°C is 59ns/283ns, and Test Condition is 400V, 30A, 23 Ohm, 15V, and the Pd Power Dissipation is 227 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 40 C, and Collector Emitter Voltage VCEO Max is 650 V, and the Collector Emitter Saturation Voltage is 1.05 V, and Continuous Collector Current at 25 C is 85 A, and the Gate Emitter Leakage Current is 100 nA, and Maximum Gate Emitter Voltage is 20 V.

IKW30N65H5XKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TrenchStop? Series, IGBT Type is shown on datasheet note for use in a Trench, that offers Package Case features such as TO-247-3, Mounting Type is designed to work in Through Hole, as well as the Standard Input Type, the device can also be used as PG-TO247-3 Supplier Device Package. In addition, the Part Aliases is IKW30N65H5 SP001204194, the device is offered in 90A Current Collector Pulsed Icm, the device has a 70ns of Reverse Recovery Time trr, and Gate Charge is 70nC, and the Voltage Collector Emitter Breakdown Max is 650V, and Current Collector Ic Max is 55A, and the Test Condition is 400V, 15A, 23 Ohm, 15V, and Switching Energy is 280μJ (on), 100μJ (off), and the Td on off 25°C is 20ns/190ns, and Vce on Max Vge Ic is 2.1V @ 15V, 30A, and the Power Max is 188W.

Features

TrenchStop™ Series


High efficiency in hard switching and resonant topologies

Low EMI

Low gate charge Qg

Soft and fast recovery anti-parallel diode

Trench and Fieldstop technology



Through Hole Mounting Type

Applications


Industrial UPS

Charger

Energy storage

Three-level solar string inverter

Welding


产品属性
全选
型号系列: TrenchStop™
包装: 管件
部件状态: 在售
IGBT 类型: 沟槽型场截止
最大集电极-发射极击穿电压: 1200 V
集电极电流 (Ic)(最大值): 80 A
电流 - 集电极脉冲 (Icm): 160 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.15V @ 15V,40A
最大功率: 500 W
开关能量: 2.55mJ(开),1.55mJ(关)
输入类型: 标准
栅极电荷: 285 nC
25°C 时的开/关延迟时间: 27ns/315ns
测试条件: 600V,40A,9 欧姆,15V
反向恢复时间 (trr): 400 ns
工作温度: -40°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: PG-TO247-3-41
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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