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IKW30N60DTP

Infineon IKW30N60DTP

600 V53 A710µJ(开),420µJ(关)-40°C ~ 175°C(TJ)TO-247-3

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IKW30N60DTP
HIGH SPEED IGBT
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¥16.35

价格更新:一个月前

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产品详情

Overview

The IKW25N120T2 is IGBT 1200V 50A 349W TO247-3, that includes TrenchStopR Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IKW25N120T2FKSA1 IKW25N120T2XK SP000244960, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the TO-247-3 Package Case, the device can also be used as Standard Input Type. In addition, the Mounting Type is Through Hole, the device is offered in PG-TO247-3 Supplier Device Package, the device has a Single of Configuration, and Power Max is 349W, and the Reverse Recovery Time trr is 195ns, and Current Collector Ic Max is 50A, and the Voltage Collector Emitter Breakdown Max is 1200V, and IGBT Type is Trench, and the Current Collector Pulsed Icm is 100A, and Vce on Max Vge Ic is 2.2V @ 15V, 25A, and the Switching Energy is 2.9mJ, and Gate Charge is 120nC, and the Td on off 25°C is 27ns/265ns, and Test Condition is 600V, 25A, 16.4 Ohm, 15V, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and the Collector Emitter Voltage VCEO Max is 1200 V, and Collector Emitter Saturation Voltage is 2.2 V, and the Maximum Gate Emitter Voltage is +/- 20 V, and Continuous Collector Current Ic Max is 50 A.

IKW25T120=K25T120 with EDA / CAD Models manufactured by INF. The IKW25T120=K25T120 is available in TO-3P Package, is part of the IC Chips.

Features

TRENCHSTOP™ Series
Bulk Package
Trench Field Stop IGBT Type
600 V Voltage - Collector Emitter Breakdown (Max)
53 A Current - Collector (Ic) (Max)
90 A Current - Collector Pulsed (Icm)
1.8V @ 15V, 30A Vce(on) (Max) @ Vge, Ic
200 W Power - Max
710µJ (on), 420µJ (off) Switching Energy
Standard Input Type
130 nC Gate Charge
15ns/179ns Td (on/off) @ 25°C
400V, 30A, 10.5Ohm, 15V Test Condition
76 ns Reverse Recovery Time (trr)
Through Hole Mounting Type
产品属性
全选
型号系列: TRENCHSTOP™
包装: 散装
部件状态: 在售
IGBT 类型: 沟槽型场截止
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 53 A
电流 - 集电极脉冲 (Icm): 90 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 1.8V @ 15V,30A
最大功率: 200 W
开关能量: 710µJ(开),420µJ(关)
输入类型: 标准
栅极电荷: 130 nC
25°C 时的开/关延迟时间: 15ns/179ns
测试条件: 400V,30A,10.5 欧姆,15V
反向恢复时间 (trr): 76 ns
工作温度: -40°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: PG-TO247-3
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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