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IHW40N120R5XKSA1

Infineon IHW40N120R5XKSA1

1200 V80 A1.6mJ(关)-40°C ~ 175°C(TJ)TO-247-3

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IHW40N120R5XKSA1
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¥20.40

价格更新:一个月前

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产品详情

Overview

The IHW30N90TFKSA1 is IGBT 900V 60A 428W TO247-3, that includes TrenchStopR Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IHW30N90T IHW30N90TXK SP000076322, that offers Package Case features such as TO-247-3, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as PG-TO247-3 Supplier Device Package. In addition, the Power Max is 428W, the device is offered in 60A Current Collector Ic Max, the device has a 900V of Voltage Collector Emitter Breakdown Max, and IGBT Type is Trench Field Stop, and the Current Collector Pulsed Icm is 90A, and Vce on Max Vge Ic is 1.7V @ 15V, 30A, and the Switching Energy is 1.8mJ (off), and Gate Charge is 280nC, and the Td on off 25°C is 45ns/556ns, and Test Condition is 600V, 30A, 15 Ohm, 15V.

The IHW30N90R is IGBT 900V 60A 454W TO247-3, that includes Tube Packaging, they are designed to operate with a Trench Field Stop IGBT Type, Package Case is shown on datasheet note for use in a TO-247-3, that offers Mounting Type features such as Through Hole, Input Type is designed to work in Standard, as well as the PG-TO247-3 Supplier Device Package, the device can also be used as 90A Current Collector Pulsed Icm. In addition, the Voltage Collector Emitter Breakdown Max is 900V, the device is offered in 60A Current Collector Ic Max, the device has a 600V, 30A, 15 Ohm, 15V of Test Condition, and Power Max is 454W, and the Gate Charge is 200nC, and Vce on Max Vge Ic is 1.7V @ 15V, 30A, and the Switching Energy is 1.46mJ, and Td on off 25°C is -/511ns.

Features

TrenchStop™ Series

?Powerful monolithic body diode with low for ward voltage

Designed for soft commutation

?TRENCHSTOPTM technology offering:

-very tight parameter distribution

-high ruggedness,temperatures table behavior

-low CEsat

-easy parallel switching capability due to positive

Temperature coefficient in VCEsat

?Low EMI

?Qualified according to JESD-022fortargetapplications

?Pb-free lead plating;RoHS compliant

?Halogen free (accordingtoIEC61249-2-21)

?Complete product spectrum and PSpice Models:

 

Through Hole Mounting Type

Applications

?Induction cooking

?Microwave ovens

 


产品属性
全选
型号系列: TrenchStop™
包装: 管件
部件状态: 在售
IGBT 类型: 沟槽型场截止
最大集电极-发射极击穿电压: 1200 V
集电极电流 (Ic)(最大值): 80 A
电流 - 集电极脉冲 (Icm): 120 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 1.85V @ 15V,40A
最大功率: 394 W
开关能量: 1.6mJ(关)
输入类型: 标准
栅极电荷: 310 nC
25°C 时的开/关延迟时间: -/420ns
测试条件: 600V,40A,10 欧姆,15V
工作温度: -40°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: PG-TO247-3
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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