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IGT60R070D1ATMA1

Infineon IGT60R070D1ATMA1

N 通道600 V31A(Tc)1.6V @ 2.6mA125W(Tc)-55°C ~ 150°C(TJ)表面贴装型

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IGT60R070D1ATMA1
GANFET N-CH 600V 31A 8HSOF
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¥171.93

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

IGP40N65H5XKSA1 with pin details, that includes TrenchStopR Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IGP40N65H5 SP001001738, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the TO-247-3 Package Case, the device can also be used as Standard Input Type. In addition, the Mounting Type is Through Hole, the device is offered in PG-TO247-3 Supplier Device Package, the device has a 255W of Power Max, and Current Collector Ic Max is 74A, and the Voltage Collector Emitter Breakdown Max is 650V, and Current Collector Pulsed Icm is 120A, and the Vce on Max Vge Ic is 2.1V @ 15V, 40A, and Switching Energy is 390μJ (on), 120μJ (off), and the Gate Charge is 95nC, and Td on off 25°C is 22ns/165ns, and the Test Condition is 400V, 20A, 15 Ohm, 15V, and Pd Power Dissipation is 250 W, and the Collector Emitter Voltage VCEO Max is 650 V, and Collector Emitter Saturation Voltage is 1.65 V, and the Continuous Collector Current at 25 C is 74 A, and Continuous Collector Current Ic Max is 74 A.

IGP64 with EDA / CAD Models manufactured by NVIDIA. The IGP64 is available in BGA Package, is part of the IC Chips.

Features

CoolGaN™ Series


  • Enhancement mode transistor – Normally OFF switch

  • Ultra-fast switching

  • No reverse-recovery charge

  • Capable of reverse conduction

  • Low gate charge, low output charge

  • Superior commutation ruggedness



Surface Mount Mounting Type

Applications


  • Industrial

  • Telecom

  • Totem pole PFC

  • High-frequency LLC

  • Datacenter SMPS based on the half-bridge topology


产品属性
全选
型号系列: CoolGaN™
包装: 卷带(TR)
部件状态: 停产
场效应管类型: N 通道
技术: GaNFET(氮化镓)
漏极至源极电压 (Vdss): 600 V
电流 - 连续漏极 (Id) @ 25°C: 31A(Tc)
漏极电流下的最大栅极阈值电压: 1.6V @ 2.6mA
最大栅极源电压: -10V
Vds 时的最大输入电容 (Ciss): 380 pF @ 400 V
最大功率耗散: 125W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商 设备封装: PG-HSOF-8-3
包装 / 盒: 8-PowerSFN
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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