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IDW60C65D1

Infineon IDW60C65D1

1 对共阴极650 V

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IDW60C65D1
Common Cathode Dual Diode
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¥3.19

价格更新:一个月前

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产品详情

Overview

The IDW40G65C5FKSA1 is DIODE SCHOTTKY 650V 40A TO247-3, that includes thinQ!? Series, they are designed to operate with a Schottky Silicon Carbide Diodes Product, Packaging is shown on datasheet note for use in a Bulk, that offers Part Aliases features such as IDW40G65C5 IDW40G65C5XK SP000969582, Unit Weight is designed to work in 1.340411 oz, as well as the Through Hole Mounting Style, the device can also be used as TO-247-3 Package Case. In addition, the Technology is SiC, the device is offered in Through Hole Mounting Type, the device has a PG-TO247-3 of Supplier Device Package, and Configuration is Single, and the Speed is No Recovery Time > 500mA (Io), and Diode Type is Silicon Carbide Schottky, and the Current Reverse Leakage Vr is 1.4mA @ 650V, and Voltage Forward Vf Max If is 1.7V @ 40A, and the Voltage DC Reverse Vr Max is 650V, and Current Average Rectified Io is 40A (DC), and the Reverse Recovery Time trr is 0ns, and Capacitance Vr F is 1140pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C, and Pd Power Dissipation is 183 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Vf Forward Voltage is 1.5 V, and Vr Reverse Voltage is 650 V, and the Ir Reverse Current is 220 uA, and If Forward Current is 40 A, and the Vrrm Repetitive Reverse Voltage is 650 V, and Ifsm Forward Surge Current is 182 A.

IDW40G65C5BXKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-247-3 Package Case, Part Aliases is shown on datasheet note for use in a IDW40G65C5B SP001224952.

Features

Bulk Package
1 Pair Common Cathode Diode Configuration
Standard Technology
650 V Voltage - DC Reverse (Vr) (Max)
60A (DC) Current - Average Rectified (Io) (per Diode)
1.7 V @ 30 A Voltage - Forward (Vf) (Max) @ If
Fast Recovery =< 500ns, > 200mA (Io) Speed
66 ns Reverse Recovery Time (trr)
40 µA @ 650 V Current - Reverse Leakage @ Vr
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
二极管配置: 1 对共阴极
技术: 标准
最大直流反向电压: 650 V
平均整流电流 (Io)(每个二极管): 60A(DC)
正向电流时的最大正向电压: 1.7 V @ 30 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr): 66 ns
不同 Vr 时电流 - 反向泄漏: 40 µA @ 650 V
结点工作温度: -40°C ~ 175°C
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: PG-TO247-3
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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