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IDH10G65C6XKSA1

Infineon IDH10G65C6XKSA1

SiC(Silicon Carbide)Schottky650 V24A

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IDH10G65C6XKSA1
DIODE SIL CARB 650V 24A TO220-2
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¥15.30

价格更新:一个月前

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产品详情

Overview

The IDH10G120C5XKSA1 is DIODE SCHOTTKY 1200V 10A TO220-2, that includes thinQ!? Series, they are designed to operate with a Schottky Silicon Carbide Diodes Product, Packaging is shown on datasheet note for use in a Tube, that offers Part Aliases features such as IDH10G120C5 SP001079722, Unit Weight is designed to work in 0.211644 oz, as well as the Through Hole Mounting Style, the device can also be used as TO-220-2 Package Case. In addition, the Technology is SiC, the device is offered in Through Hole Mounting Type, the device has a PG-TO220-2-1 of Supplier Device Package, and Configuration is Single, and the Speed is Fast Recovery = 200mA (Io), and Diode Type is Silicon Carbide Schottky, and the Current Reverse Leakage Vr is 62μA @ 1200V, and Voltage Forward Vf Max If is 1.8V @ 10A, and the Voltage DC Reverse Vr Max is 1200V (1.2kV), and Current Average Rectified Io is 10A (DC), and the Capacitance Vr F is 525pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C, and the Pd Power Dissipation is 165 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vf Forward Voltage is 1.5 V, and the Vr Reverse Voltage is 1.2 kV, and Ir Reverse Current is 4 uA, and the If Forward Current is 10 A, and Vrrm Repetitive Reverse Voltage is 1.2 kV, and the Ifsm Forward Surge Current is 99 A.

The IDH10G65C5XKSA1 is Schottky Diodes & Rectifiers SIC DIODES, that includes Tube Packaging, they are designed to operate with a TO-220-2 Package Case, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Technology features such as SiC, Product is designed to work in Schottky Silicon Carbide Diodes, as well as the IDH10G65C5 IDH10G65C5XK SP000925208 Part Aliases, the device can also be used as IDH10G65 Series. In addition, the Pd Power Dissipation is 89 W, the device is offered in 82 A Ifsm Forward Surge Current, the device has a 650 V of Vrrm Repetitive Reverse Voltage, and If Forward Current is 10 A, and the Unit Weight is 0.211644 oz, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C.

Features

Tube Package
A maximum reverse current of 33μA

Through Hole Mounting Type

Applications


There are a lot of Infineon Technologies
IDH10G65C6XKSA1 applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
包装: 管件
部件状态: 在售
技术: SiC(Silicon Carbide)Schottky
最大直流反向电压: 650 V
平均整流电流 (Io): 24A
正向电流时的最大正向电压: 1.35 V @ 10 A
速度: 无恢复时间 > 500mA(Io)
反向恢复时间 (trr): 0 ns
不同 Vr 时电流 - 反向泄漏: 33 µA @ 420 V
Vr 时的电容,F: 495pF @ 1V,1MHz
安装类型: 通孔
封装/外壳: TO-220-2
供应商器件封装: PG-TO220-2
结点工作温度: -55°C ~ 175°C
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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