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IDH04G65C6XKSA1

Infineon IDH04G65C6XKSA1

SiC(Silicon Carbide)Schottky650 V12A

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IDH04G65C6XKSA1
DIODE SIL CARB 650V 12A TO220-2
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¥15.66

价格更新:一个月前

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产品详情

Overview

The IDH04G65C5 is DIODE SCHOTTKY 650V 4A TO220-2, that includes thinQ!? Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IDH04G65C5XK IDH04G65C5XKSA1 SP000925198, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the TO-220-2 Package Case, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is PG-TO220-2, the device is offered in No Recovery Time > 500mA (Io) Speed, the device has a Silicon Carbide Schottky of Diode Type, and Current Reverse Leakage Vr is 140μA @ 650V, and the Voltage Forward Vf Max If is 1.7V @ 4A, and Voltage DC Reverse Vr Max is 650V, and the Current Average Rectified Io is 4A (DC), and Reverse Recovery Time trr is 0ns, and the Capacitance Vr F is 130pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C.

The IDH04G65C5XKSA1 is Schottky Diodes & Rectifiers SIC DIODES, that includes Tube Packaging, they are designed to operate with a TO-220-2 Package Case, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Technology features such as SiC, Product is designed to work in Schottky Silicon Carbide Diodes, as well as the IDH04G65C5 IDH04G65C5XK SP000925198 Part Aliases, the device can also be used as IDH04G65 Series. In addition, the Vrrm Repetitive Reverse Voltage is 650 V, the device is offered in 48 W Pd Power Dissipation, the device has a 4 A of If Forward Current, and Ifsm Forward Surge Current is 38 A, and the Unit Weight is 0.211644 oz, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C.

Features

Tube Package
A maximum reverse current of 14μA

Through Hole Mounting Type

Applications


There are a lot of Infineon Technologies
IDH04G65C6XKSA1 applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
包装: 管件
部件状态: 在售
技术: SiC(Silicon Carbide)Schottky
最大直流反向电压: 650 V
平均整流电流 (Io): 12A
正向电流时的最大正向电压: 1.35 V @ 4 A
速度: 无恢复时间 > 500mA(Io)
反向恢复时间 (trr): 0 ns
不同 Vr 时电流 - 反向泄漏: 14 µA @ 420 V
Vr 时的电容,F: 205pF @ 1V,1MHz
安装类型: 通孔
封装/外壳: TO-220-2
供应商器件封装: PG-TO220-2
结点工作温度: -55°C ~ 175°C
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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