Infineon BSZ900N15NS3GATMA1

N 通道150 V13A（Tc）4V @ 20µA38W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

The BSZ520N15NS3G is MOSFET N-CH 150V 21A 8-TSDSON, that includes OptiMOS? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a BSZ520N15NS3GATMA1 BSZ520N15NS3GXT SP000607022, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the 8-PowerTDFN Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is PG-TSDSON-8 (3.3x3.3), and the Configuration is Single Quad Drain Triple Source, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 57W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 150V, and Input Capacitance Ciss Vds is 890pF @ 75V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 21A (Tc), and the Rds On Max Id Vgs is 52 mOhm @ 18A, 10V, and Vgs th Max Id is 4V @ 35μA, and the Gate Charge Qg Vgs is 12nC @ 10V, and Pd Power Dissipation is 57 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 3 ns, and Rise Time is 5 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 21 A, and the Vds Drain Source Breakdown Voltage is 150 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 52 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 10 ns, and Typical Turn On Delay Time is 7 ns, and the Qg Gate Charge is 12 nC, and Forward Transconductance Min is 21 S 11 S, and the Channel Mode is Enhancement.

The BSZ520N15NS3GATMA1 is MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3, that includes SMD/SMT Mounting Style, they are designed to operate with a 1 Channel Number of Channels, Package Case is shown on datasheet note for use in a TSDSON-8, that offers Packaging features such as Reel, Part Aliases is designed to work in BSZ520N15NS3 BSZ520N15NS3GXT G SP000607022, as well as the BSZ520N15 Series, the device can also be used as Si Technology. In addition, the Tradename is OptiMOS, the device is offered in N-Channel Transistor Polarity, the device has a 1 N-Channel of Transistor Type.

Features

• Normal level

• MSL1 rated 2

• Increased efficiency

• Very low Qg and Qgd

• Highest power density

• Less paralleling required

• World's lowest RDS (ON)

• Easy-to-design products

• Halogen-free, Green device

• Excellent switching performance

• Smallest board-space consumption

• Excellent gate charge x RDS (ON) product (FOM)

• Qualified according to JEDEC for target applications

Applications

• Audio

• Automotive

• Power Management

• Motor Drive & Control

• Communications & Networking