ON FDMD8260L

MOSFET（金属氧化物）2 N-通道（双）60V15A5.8 毫欧 @ 15A，10V3V @ 250µA

Overview

This device includes two 60V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.

Features

Max rDS(on) = 5.8 m|? at VGS = 10 V, ID = 15 A

Max rDS(on) = 8.7 m|? at VGS = 4.5 V, ID = 12 A

Ideal for Flexible Layout in Primary Side of Bridge Topology

100% UIL Tested

Kelvin High Side MOSFET Drive Pin-out Capability

Termination is Lead-free and RoHS Compliant

Applications

This product is general usage and suitable for many different applications.