Infineon BSO615CGXUMA1

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道60V3.1A（Ta），2A（Ta）110 毫欧 @ 3.1A，10V，300 毫欧 @ 2A，10V2V @ 20µA，2V @ 450µA

Features

SIPMOS® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
3.1A (Ta), 2A (Ta) Current - Continuous Drain (Id) @ 25°C
110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V Rds On (Max) @ Id, Vgs
2V @ 20µA, 2V @ 450µA Vgs(th) (Max) @ Id
22.5nC @ 10V, 20nC @ 10V Gate Charge (Qg) (Max) @ Vgs
380pF @ 25V, 460pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W (Ta) Power - Max
Surface Mount Mounting Type