Infineon BSO612CVG

MOSFET（金属氧化物）N 和 P 沟道60V3A (Ta), 2A (Ta)120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V4V @ 20µA, 4V @ 450µA

Overview

The BSO612CV is MOSFET N/P-CH 60V 3A/2A 8SOIC, that includes SIPMOSR Series, they are designed to operate with a Cut Tape (CT) Packaging, Package Case is shown on datasheet note for use in a 8-SOIC (0.154", 3.90mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the P-DSO-8 Supplier Device Package, the device can also be used as N and P-Channel FET Type. In addition, the Power Max is 2W, the device is offered in 60V Drain to Source Voltage Vdss, the device has a 340pF @ 25V of Input Capacitance Ciss Vds, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 3A, 2A, and Rds On Max Id Vgs is 120 mOhm @ 3A, 10V, and the Vgs th Max Id is 4V @ 20μA, and Gate Charge Qg Vgs is 15.5nC @ 10V.

BSO612CV/612CV with circuit diagram manufactured by INF. The BSO612CV/612CV is available in SOP8 Package, is part of the IC Chips.

Features

SIPMOS® Series
Bulk Package
MOSFET (Metal Oxide) Technology
60V Drain to Source Voltage (Vdss)
3A (Ta), 2A (Ta) Current - Continuous Drain (Id) @ 25°C
120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V Rds On (Max) @ Id, Vgs
4V @ 20µA, 4V @ 450µA Vgs(th) (Max) @ Id
15.5nC @ 10V, 16nC @ 10V Gate Charge (Qg) (Max) @ Vgs
340pF, 400pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W (Ta) Power - Max
Surface Mount Mounting Type