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AUIRFS8408-7TRL

Infineon AUIRFS8408-7TRL

N 通道40 V240A(Tc)3.9V @ 250µA294W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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AUIRFS8408-7TRL
MOSFET N-CH 40V 240A D2PAK
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¥6.00

价格更新:一个月前

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产品详情

Overview

The AUIRFS8408 is MOSFET Auto 40V N-Ch FET 1.3mOhm 195A, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as CoolIRFet, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 294 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 119 ns, and the Rise Time is 202 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 195 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Vgs th Gate Source Threshold Voltage is 2.2 V to 3.9 V, and Rds On Drain Source Resistance is 1.6 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 108 ns, and the Typical Turn On Delay Time is 29 ns, and Qg Gate Charge is 210 nC, and the Forward Transconductance Min is 211 S, and Channel Mode is Enhancement.

AUIRFS8407TRR with circuit diagram, that includes 195 A Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Number of Channels is shown on datasheet note for use in a 1 Channel, that offers Package Case features such as TO-252-3, Packaging is designed to work in Reel, as well as the 230 W Pd Power Dissipation, the device can also be used as 150 nC Qg Gate Charge. In addition, the Rds On Drain Source Resistance is 1.4 mOhms, the device is offered in Si Technology, the device has a CoolIRFet of Tradename, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Unit Weight is 0.139332 oz, and the Vds Drain Source Breakdown Voltage is 40 V.

Features

HEXFET® Series
a 40V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications


There are a lot of Infineon Technologies
AUIRFS8408-7TRL applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
产品属性
全选
型号系列: HEXFET®
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 40 V
25°C 时电流 - 连续漏极 (Id): 240A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 1 毫欧 @ 100A,10V
漏极电流下的最大栅极阈值电压: 3.9V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 315 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 10250 pF @ 25 V
最大功率耗散: 294W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: PG-TO263-7-900
封装/外壳: TO-263-7,D²Pak(6 引线 + 接片),TO-263CB
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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