Infineon AUIRF9952QTR

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V3.5A，2.3A100 毫欧 @ 2.2A，10V3V @ 250µA

Overview

The AUIRF9952Q is MOSFET N/P-CH 30V 3.5A/2.3A 8SO, that includes HEXFETR Series, they are designed to operate with a Tube Alternate Packaging Packaging, Package Case is shown on datasheet note for use in a 8-SOIC (0.154", 3.90mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-SO Supplier Device Package, the device can also be used as N and P-Channel FET Type. In addition, the Power Max is 2W, the device is offered in 30V Drain to Source Voltage Vdss, the device has a 190pF @ 15V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 3.5A, 2.3A, and Rds On Max Id Vgs is 100 mOhm @ 2.2A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 14nC @ 10V.

AUIRF9952QPBF with circuit diagram The AUIRF9952QPBF is available in SOP-8 Package, is part of the IC Chips.

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
3.5A, 2.3A Current - Continuous Drain (Id) @ 25°C
100mOhm @ 2.2A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
14nC @ 10V Gate Charge (Qg) (Max) @ Vgs
190pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type