Infineon AUIRF9952Q

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V3.5A，2.3A100 毫欧 @ 2.2A，10V3V @ 250µA

Overview

The AUIRF9540N is MOSFET AUTO -100V 1 P-CH HEXFET 117mOhms, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 P-Channel, the device is offered in 140 W Pd Power Dissipation, the device has a 20 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is - 23 A, and the Vds Drain Source Breakdown Voltage is - 100 V, and Rds On Drain Source Resistance is 117 mOhms, and the Transistor Polarity is P-Channel, and Qg Gate Charge is 64.7 nC.

AUIRF8739L2TR with circuit diagram, that includes Reel Packaging, they are designed to operate with a Si Technology.

Features

HEXFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
3.5A, 2.3A Current - Continuous Drain (Id) @ 25°C
100mOhm @ 2.2A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
14nC @ 10V Gate Charge (Qg) (Max) @ Vgs
190pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type