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AUIRF7304QTR

Infineon AUIRF7304QTR

MOSFET(金属氧化物)逻辑电平门2 个 P 沟道(双)20V4.3A90 毫欧 @ 2.2A,4.5V1.5V @ 250µA

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AUIRF7304QTR
MOSFET 2P-CH 20V 4A 8SOIC
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产品详情

Overview

The AUIRF7303QTR is MOSFET 2N-CH 30V 5.3A 8SOIC, that includes HEXFETR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.019048 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 2.4W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 515pF @ 25V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 5.3A, and Rds On Max Id Vgs is 50 mOhm @ 2.7A, 10V, and the Vgs th Max Id is 3V @ 100μA, and Gate Charge Qg Vgs is 21nC @ 10V, and the Pd Power Dissipation is 2 W, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 7.7 ns, and Rise Time is 21 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 4.9 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 80 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 22 ns, and the Typical Turn On Delay Time is 6.8 ns, and Qg Gate Charge is 16.7 nC, and the Channel Mode is Enhancement.

AUIRF7303QTRPBF with circuit diagram manufactured by IR. The AUIRF7303QTRPBF is available in SOP-8 Package, is part of the IC Chips.

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
4.3A Current - Continuous Drain (Id) @ 25°C
90mOhm @ 2.2A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
22nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
610pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: HEXFET®
包装: 卷带(TR)
部件状态: 停止提供
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 个 P 沟道(双)
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 4.3A
漏极电流和栅极至源极电压下的最大导通电阻: 90 毫欧 @ 2.2A,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 22nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 610pF @ 15V
最大功率: 2W
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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