Infineon AUIRF7303Q

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V5.3A50 毫欧 @ 2.7A，10V3V @ 100µA

Overview

The AUIRF7103QTR is MOSFET 2N-CH 50V 3A 8SOIC, that includes HEXFETR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.017870 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 2.4W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 50V, and the Input Capacitance Ciss Vds is 255pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 3A, and Rds On Max Id Vgs is 130 mOhm @ 3A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 15nC @ 10V, and the Pd Power Dissipation is 2.4 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 2.3 ns, and the Rise Time is 1.7 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 3 A, and Vds Drain Source Breakdown Voltage is 50 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 200 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 15 ns, and the Typical Turn On Delay Time is 5.1 ns, and Qg Gate Charge is 10 nC, and the Forward Transconductance Min is 3.4 S, and Channel Mode is Enhancement.

The AUIRF7103Q is MOSFET 2N-CH 50V 3A 8SOIC, that includes 3A Current Continuous Drain Id 25°C, they are designed to operate with a 50V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Standard, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 15nC @ 10V, as well as the 255pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-SOIC (0.154", 3.90mm Width) Package Case, the device has a Tube Alternate Packaging of Packaging, and Power Max is 2.4W, and the Rds On Max Id Vgs is 130 mOhm @ 3A, 10V, and Series is HEXFETR, and the Supplier Device Package is 8-SO, and Vgs th Max Id is 3V @ 250μA.

Features

HEXFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
5.3A Current - Continuous Drain (Id) @ 25°C
50mOhm @ 2.7A, 10V Rds On (Max) @ Id, Vgs
3V @ 100µA Vgs(th) (Max) @ Id
21nC @ 10V Gate Charge (Qg) (Max) @ Vgs
515pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.4W Power - Max
Surface Mount Mounting Type