TI LM74610QDGKTQ1

N+1 ORing 控制器N 通道

Overview

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

Features

• Qualified for Automotive Applications

• Maximum reverse voltage of 45 V

• No Positive Voltage limitation to Anode terminal

• Charge Pump Gate Driver for external N-Channel MOSFET

• Lower Power Dissipation than Schottky Diode/PFET solutions

• Low reverse leakage current

• Zero IQ

• Fast 2 μs Response to Reverse Polarity

• -40 °C to 125 °C Operating Ambient Temperature

• Can be used in OR-ing Applications

• Meets CISPR25 EMI Specification

• Meets Automotive IS07637 Transient Requirements with a suitable TVS Diode

Applications

• ADAS

• Infotainment Systems

• Power Tools (Industrial)

• Transmission Control Unit (TCU)

• Battery OR-ing Applications