ST STW21NM60ND

N 通道600 V17A（Tc）5V @ 250µA140W（Tc）150°C（TJ）通孔

Overview

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.

■ The worldwide best RDS(on)*area amongst the fast recovery diode devices■ 100% avalanche tested■ Low input capacitance and gate charge■ Low gate input resistance■ Extremely high dv/dt and avalanche capabilities

Features

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high dv/dt and avalanche capabilities

• Intrinsic fast-recovery body diode

• Worldwide best RDS(on)*area amongst the fast recovery diode devices

• 100% avalanche tested

Applications

• Switching Applications

• Uninterruptible Power Supplies (UPS)

• Small Motor Control

• Switch Mode Power Supplies (SMPS)

• Power-Over-Ethernet (PoE)