ST STQ1NK60ZR-AP

N 通道600 V300mA（Tc）4.5V @ 50µA3W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH technology, achieved through optimization of ST's well established strip-based PowerMESH layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

SuperMESH™ Series
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 400mA
the turn-off delay time is 13 ns
a threshold voltage of 3.75V
a 600V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications

There are a lot of STMicroelectronics
STQ1NK60ZR-AP applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples