ST STP13N60M2

N 通道600 V11A（Tc）4V @ 250µA110W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features

MDmesh™ II Plus Series
a continuous drain current (ID) of 11A
the turn-off delay time is 41 ns
a 600V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications

There are a lot of STMicroelectronics
STP13N60M2 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies