ST STN1NK60Z

N 通道600 V300mA（Tc）4.5V @ 50µA3.3W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH technology, achieved through optimization of ST's well established strip-based PowerMESH layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

SuperMESH™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
300mA (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
15Ohm @ 400mA, 10V Rds On (Max) @ Id, Vgs
4.5V @ 50µA Vgs(th) (Max) @ Id
6.9 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
94 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
3.3W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type