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STL7NM60N

ST STL7NM60N

N 通道600 V5.8A(Tc)4V @ 250µA68W(Tc)-55°C ~ 150°C(TJ)表面贴装型

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STL7NM60N
MOSFET N-CH 600V 5.8A 14PWRFLAT
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¥2.88

价格更新:一个月前

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产品详情

Overview

STL7N80K5 with pin details, that includes MDmesh K5 Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as PowerFlat-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Triple Common Source Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 42 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 20.2 ns, and Rise Time is 8.3 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 3.6 A, and the Vds Drain Source Breakdown Voltage is 800 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 1.2 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 23.7 ns, and Typical Turn On Delay Time is 11.3 ns, and the Qg Gate Charge is 13.4 nC.

STL7N6LF3 with circuit diagram, that includes 20A (Tc) Current Continuous Drain Id 25°C, they are designed to operate with a 60V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as MOSFET N-Channel, Metal Oxide, Gate Charge Qg Vgs is designed to work in 8.7nC @ 10V, as well as the 432pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-PowerVDFN Package Case, the device has a Digi-ReelR Alternate Packaging of Packaging, and Power Max is 52W, and the Rds On Max Id Vgs is 43 mOhm @ 3A, 10V, and Series is Automotive, AEC-Q101, STripFET? F3, and the Supplier Device Package is PowerFlat? (5x6), and Vgs th Max Id is 2.5V @ 250μA.

Features

MDmesh™ II Series


  • 100% avalanche tested

  • Low gate input resistance

  • Low input capacitance and gate charge



Surface Mount Mounting Type

Applications


  • Industrial

  • Enterprise systems

  • Communications equipment


产品属性
全选
型号系列: MDmesh™ II
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 600 V
25°C 时电流 - 连续漏极 (Id): 5.8A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 900 毫欧 @ 2.5A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 14 nC @ 10 V
最大栅极源电压: ±25V
Vds 时的最大输入电容 (Ciss): 363 pF @ 50 V
最大功率耗散: 68W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: 14-PowerFLAT™(5x5)
封装/外壳: 14-PowerVQFN
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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