ST STL3NM60N

N 通道600 V650mA（Ta），2.2A（Tc）4V @ 250µA2W（Ta），22W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

MDmesh™ II Series
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 20.8 ns
a threshold voltage of 3V

PowerFlat™ (3.3x3.3) Supplier Device Package

Applications

There are a lot of STMicroelectronics
STL3NM60N applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies