ST STL130N8F7

N 通道80 V130A（Tc）4.5V @ 250µA135W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

 Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description 

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

Features

• Among the lowest RDS(on) on the market

• Excellent FoM (figure of merit)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial