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STF5N52U

ST STF5N52U

N 通道525 V4.4A(Tc)4.5V @ 50µA25W(Tc)-55°C ~ 150°C(TJ)通孔

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STF5N52U
MOSFET N-CH 525V 4.4A TO220FP
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¥0.92

价格更新:一个月前

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产品详情

Overview

STF5N105K5 with pin details, that includes MDmesh K5 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 25 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 24 ns, and the Rise Time is 8.5 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 3 A, and Vds Drain Source Breakdown Voltage is 1050 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 2.9 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 31 ns, and the Typical Turn On Delay Time is 15.5 ns, and Qg Gate Charge is 12.5 nC, and the Channel Mode is Enhancement.

The STF57N65M5 is MOSFET N-CH 650V 42A TO-220FP, that includes 26.5 A Id Continuous Drain Current, they are designed to operate with a Through Hole Mounting Style, Number of Channels is shown on datasheet note for use in a 1 Channel, that offers Package Case features such as TO-220-3, Packaging is designed to work in Tube, as well as the 40 W Pd Power Dissipation, the device can also be used as 63 mOhms Rds On Drain Source Resistance. In addition, the Series is MDmesh M5, the device is offered in Si Technology, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.011640 oz, and Vds Drain Source Breakdown Voltage is 650 V.

Features

UltraFASTmesh™ Series

Outstanding dv/dt capability 

Gate charge minimized 

Very low intrinsic capacitances 

Very low RDS(on) 

Extremely low trr



Through Hole Mounting Type

Applications

Switching applications



产品属性
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型号系列: UltraFASTmesh™
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 525 V
25°C 时电流 - 连续漏极 (Id): 4.4A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 1.5 欧姆 @ 2.2A,10V
漏极电流下的最大栅极阈值电压: 4.5V @ 50µA
最大栅极电荷 (Qg) @ Vgs: 16.9 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 529 pF @ 25 V
最大功率耗散: 25W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220FP
封装/外壳: TO-220-3 整包
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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