ST STF25NM50N

N 通道500 V22A（Tc）4V @ 250µA40W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The STF25N80K5 is MOSFET N-CH 800V 19.5A TO220FP, that includes SuperMESH5? Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3 Full Pack, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-220FP of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 40W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 800V, and the Input Capacitance Ciss Vds is 1600pF @ 100V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 19.5A (Tc), and Rds On Max Id Vgs is 260 mOhm @ 19.5A, 10V, and the Vgs th Max Id is 5V @ 100μA, and Gate Charge Qg Vgs is 40nC @ 10V, and the Pd Power Dissipation is 40 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 19.5 A, and Vds Drain Source Breakdown Voltage is 800 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 260 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 40 nC, and the Channel Mode is Enhancement.

STF25N60M2-EP with circuit diagram, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 16 ns, that offers Id Continuous Drain Current features such as 18 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as Through Hole Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in TO-220FP-3 Package Case, the device has a 30 W of Pd Power Dissipation, and Qg Gate Charge is 29 nC, and the Rds On Drain Source Resistance is 188 mOhms, and Rise Time is 10 ns, and the Technology is Si, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 61 ns, and Typical Turn On Delay Time is 15 ns, and the Unit Weight is 0.081130 oz, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs Gate Source Voltage is +/- 25 V, and Vgs th Gate Source Threshold Voltage is 2 V.

Features

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Drain-source voltage (VGS = 0): 500v

• Gate- source voltage: ?à25 V

Applications

• Rotary Switch

• DIP Switch

• Limit Switch

• Reed Switch

• Rocker Switch

• Toggle Switch