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STF24NM65N

ST STF24NM65N

N 通道650 V19A(Tc)4V @ 250µA40W(Tc)-55°C ~ 150°C(TJ)通孔

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STF24NM65N
MOSFET N-CH 650V 19A TO220FP
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¥7.09

价格更新:一个月前

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产品详情

Overview

STF24N65M2 with pin details, that includes MDmesh M2 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.081130 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220FP-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 30 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 25.5 ns, and Rise Time is 9.5 ns, and the Vgs Gate Source Voltage is 25 V, and Id Continuous Drain Current is 16 A, and the Vds Drain Source Breakdown Voltage is 650 V, and Vgs th Gate Source Threshold Voltage is 2 V, and the Rds On Drain Source Resistance is 185 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 68 ns, and Typical Turn On Delay Time is 10 ns, and the Qg Gate Charge is 29 nC, and Channel Mode is Enhancement.

STF24NF12 with circuit diagram manufactured by ST. The STF24NF12 is available in TO-220F Package, is part of the IC Chips.

Features

MDmesh™ II Series
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 76A.

Through Hole Mounting Type

Applications


There are a lot of STMicroelectronics
STF24NM65N applications of single MOSFETs transistors.

  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
产品属性
全选
型号系列: MDmesh™ II
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 650 V
25°C 时电流 - 连续漏极 (Id): 19A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 190 毫欧 @ 9.5A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 70 nC @ 10 V
最大栅极源电压: ±25V
Vds 时的最大输入电容 (Ciss): 2500 pF @ 50 V
最大功率耗散: 40W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220FP
封装/外壳: TO-220-3 整包
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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