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STF14NM65N

ST STF14NM65N

N 通道650 V12A(Tc)4V @ 250µA30W(Tc)150°C(TJ)通孔

比较
STF14NM65N
MOSFET N-CH 650V 12A TO220FP
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¥15.30

价格更新:一个月前

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产品详情

Overview

The STF140N8F7 is MOSFET Nchanl 80 V 0035 Ohm typ 64 A Pwr MOSFET, that includes N-channel STripFET Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 35 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 44 ns, and the Rise Time is 51 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 64 A, and Vds Drain Source Breakdown Voltage is 80 V, and the Vgs th Gate Source Threshold Voltage is 4.5 V, and Rds On Drain Source Resistance is 4.3 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 82 ns, and the Typical Turn On Delay Time is 26 ns, and Qg Gate Charge is 96 nC.

STF13NM6N with circuit diagram manufactured by ST. The STF13NM6N is available in TO220F Package, is part of the IC Chips.

Features

MDmesh™ II Series
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 48A.

Through Hole Mounting Type

Applications


There are a lot of STMicroelectronics
STF14NM65N applications of single MOSFETs transistors.

  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
产品属性
全选
型号系列: MDmesh™ II
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 650 V
25°C 时电流 - 连续漏极 (Id): 12A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 380 毫欧 @ 6A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 45 nC @ 10 V
最大栅极源电压: ±25V
Vds 时的最大输入电容 (Ciss): 1300 pF @ 50 V
最大功率耗散: 30W(Tc)
工作温度: 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220FP
封装/外壳: TO-220-3 整包
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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