ST STF14NM50N

N 通道500 V12A（Tc）4V @ 100µA25W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

These devices are N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

MDmesh™ II Series
Tube Package
MOSFET (Metal Oxide) Technology
500 V Drain to Source Voltage (Vdss)
12A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
320mOhm @ 6A, 10V Rds On (Max) @ Id, Vgs
4V @ 100µA Vgs(th) (Max) @ Id
27 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±25V Vgs (Max)
816 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
25W (Tc) Power Dissipation (Max)
Through Hole Mounting Type

Applications

 

? 100% avalanche tested

? Low input capacitance and gate charge

? Low gate input resistance

 

STF14NM50N   Applications

? Switching applications