ST STE45NK80ZD

N 通道800 V45A（Tc）4.5V @ 150µA600W（Tc）-65°C ~ 150°C（TJ）底座安装

Overview

The STE40NC60 is MOSFET N-Ch 600 Volt 40 Amp, that includes N-channel MDmesh Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in ISOTOP-4, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single Dual Source, the device is offered in 1 N-Channel Transistor Type, the device has a 460 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Fall Time is 26 ns, and the Rise Time is 42 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 40 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 130 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn On Delay Time is 49 ns, and Forward Transconductance Min is 42 S, and the Channel Mode is Enhancement.

STE45N50 with circuit diagram manufactured by ST. The STE45N50 is available in MODULE Package, is part of the Module.

Features

• Extremely high dv/dt capability

• 100% avalanche tested

• Very low intrinsic capacitances

• Excellent manufacturing repeatability

• Drain-source voltage (VGS = 0): 800v

Applications

• Rotary Switch

• DIP Switch

• Limit Switch

• Reed Switch

• Rocker Switch

• Toggle Switch