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STD20NF06T4

ST STD20NF06T4

N 通道60 V24A(Tc)4V @ 250µA60W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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STD20NF06T4
MOSFET N-CH 60V 24A DPAK
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¥3.64

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产品详情

Overview

The STD20NF06LT4 is MOSFET N-CH 60V 24A DPAK, that includes STripFET? II Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a D-Pak of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 60W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 660pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 24A (Tc), and Rds On Max Id Vgs is 40 mOhm @ 12A, 10V, and the Vgs th Max Id is 2.5V @ 250μA, and Gate Charge Qg Vgs is 13nC @ 10V, and the Pd Power Dissipation is 60 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 12 ns, and the Rise Time is 50 ns, and Vgs Gate Source Voltage is 18 V, and the Id Continuous Drain Current is 24 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 32 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 20 ns, and Typical Turn On Delay Time is 11 ns, and the Forward Transconductance Min is 20 S, and Channel Mode is Enhancement.

STD20NF06L-1 with circuit diagram manufactured by ST. The STD20NF06L-1 is available in TO-251 Package, is part of the IC Chips.

Features

STripFET™ II Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
60 V Drain to Source Voltage (Vdss)
24A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
40mOhm @ 12A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
31 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
690 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
60W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type
DPAK Supplier Device Package
产品属性
全选
型号系列: STripFET™ II
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 24A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 40 毫欧 @ 12A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 31 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 690 pF @ 25 V
最大功率耗散: 60W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: DPAK
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
STMicroelectronics

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