ST STD11NM60ND

N 通道600 V10A（Tc）5V @ 250µA90W（Tc）150°C（TJ）表面贴装型

Overview

The STD11NM50N is MOSFET N-CH 500V 9A DPAK, that includes N-channel MDmesh Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 70 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and the Fall Time is 10 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is +/- 25 V, and Id Continuous Drain Current is 8.5 A, and the Vds Drain Source Breakdown Voltage is 500 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 470 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 33 ns, and Typical Turn On Delay Time is 8 ns, and the Qg Gate Charge is 19 nC.

The STD11N65M5 is MOSFET N CH 650V 9A DPAK, that includes 9 A Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a TO-252-3, that offers Packaging features such as Reel, Pd Power Dissipation is designed to work in 85 W, as well as the 480 mOhms Rds On Drain Source Resistance, the device can also be used as MDmesh M5 Series. In addition, the Technology is Si, the device is offered in N-Channel Transistor Polarity, the device has a 0.139332 oz of Unit Weight, and Vds Drain Source Breakdown Voltage is 650 V.

Features

• The worldwide best RDS(on)* area amongst the fast recovery diode devices

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high DV/DT and avalanche capabilities

Applications

• Switching applications

• Power management

• DC-AC Conversion

• Industrial