ST STD11NM50N

N 通道500 V8.5A（Tc）4V @ 250µA70W（Tc）150°C（TJ）表面贴装型

Overview

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

MDmesh™ II Series
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
a threshold voltage of 3V

DPAK Supplier Device Package

Applications

There are a lot of STMicroelectronics
STD11NM50N applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.