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STB50N25M5

ST STB50N25M5

N 通道250 V28A(Tc)5V @ 100µA110W(Tc)-55°C ~ 150°C(TJ)表面贴装型

比较
STB50N25M5
MOSFET N-CH 250V 28A D2PAK
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比较

¥2.94

价格更新:一个月前

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产品详情

Overview

The STB4NK60ZT4 is MOSFET N-CH 600V 4A D2PAK, that includes STB4NK60Z Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 70 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 16.5 ns, and the Rise Time is 9.5 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 4 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 2 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 29 ns, and Typical Turn On Delay Time is 12 ns, and the Channel Mode is Enhancement.

The STB4NK60Z-1 is MOSFET N-CH 600V 4A I2PAK manufactured by ST. The STB4NK60Z-1 is available in TO-262-3 Long Leads, I²Pak, TO-262AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 600V 4A I2PAK, N-Channel 600V 4A (Tc) 70W (Tc) Through Hole I2PAK, Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK Tube, MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A.

Features

MDmesh™ V Series
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 35 ns
a threshold voltage of 4V

Surface Mount Mounting Type

Applications


There are a lot of STMicroelectronics
STB50N25M5 applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
产品属性
全选
型号系列: MDmesh™ V
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 250 V
25°C 时电流 - 连续漏极 (Id): 28A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 65 毫欧 @ 14A,10V
漏极电流下的最大栅极阈值电压: 5V @ 100µA
最大栅极电荷 (Qg) @ Vgs: 44 nC @ 10 V
最大栅极源电压: ±25V
Vds 时的最大输入电容 (Ciss): 1700 pF @ 50 V
最大功率耗散: 110W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: D²PAK(TO-263)
封装/外壳: TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。