ST STB23NM50N

N 通道500 V17A（Tc）4V @ 250µA125W（Tc）150°C（TJ）表面贴装型

Overview

These devices are made using the second generation of MDmeshtechnology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

MDmesh™ II Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
500 V Drain to Source Voltage (Vdss)
17A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
190mOhm @ 8.5A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
45 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±25V Vgs (Max)
1330 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
125W (Tc) Power Dissipation (Max)
150°C (TJ) Operating Temperature
Surface Mount Mounting Type

Applications

Extremely low RDS(on)

Low gate charge and input resistance

Excellent switching performance

100% avalanche tested

 

 

STB23NM50N Applications

 

High Side Driver

Switching power supplies

Low Side Driver

Power switches

Reverser Battery protection