ST SCT20N120

N 通道1200 V20A（Tc）3.5V @ 1mA175W（Tc）-55°C ~ 200°C（TJ）通孔

Overview

STMicroelectronics SCTx0N120 Silicon carbide Power MOSFETs are produced using advanced and innovative wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. Outstanding SiC material thermal properties and the proprietary HiP247package allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the devices perfectly suitable for high-efficiency and high-power density applications.

Features

Tube Package
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 27 ns
a 1200V drain to source voltage (Vdss)

HiP247™ Supplier Device Package

Applications

There are a lot of STMicroelectronics
SCT20N120 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching