ON NTJD1155LT1

MOSFET（金属氧化物）N 和 P 沟道8V1.3A175 毫欧 @ 1.2A，4.5V1V @ 250µA

Overview

The NTJD1155LT1 integrates a P and N-Channel MOSFET in a single package.This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed.The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology.The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel.The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V.The NTJD1155LT1 operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
8V Drain to Source Voltage (Vdss)
1.3A Current - Continuous Drain (Id) @ 25°C
175mOhm @ 1.2A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
400mW Power - Max
Surface Mount Mounting Type