ON NJVNJD2873T4G-VF01

NPN2 A50 V

Overview

The NJVMJD50T4G is Bipolar Transistors - BJT BIP NPN 1A 400V TR, that includes MJD50 Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as DPAK-4, Technology is designed to work in Si, as well as the Single Configuration, the device can also be used as 15 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device has a 400 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 1 V, and Collector Base Voltage VCBO is 500 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 2 A, and the Gain Bandwidth Product fT is 10 MHz, and DC Collector Base Gain hfe Min is 25 at 0.2 A at 10 V, and the DC Current Gain hFE Max is 150 at 0.3 A at 10 V.

NJVMJD6039T4G with EDA / CAD Models manufactured by ON Semiconductor. is part of the Transistors - Bipolar (BJT) - RF, , and with support for Bipolar Transistors - BJT BIP DPAK NPN 2A 80V, Bipolar (BJT) Transistor NPN - Darlington 80V 4A 1.75W Surface Mount DPAK, Trans Darlington NPN 80V 4A 1750mW Automotive 3-Pin(2+Tab) DPAK T/R.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 65MHz

DPAK Supplier Device Package

Applications

There are a lot of ON Semiconductor
NJVNJD2873T4G-VF01 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting