
ON NGTB25N120FL3WG
1200 V100 A1mJ(开),700µJ(关)-55°C ~ 175°C(TJ)TO-247-3
比较






¥11.72
价格更新:一个月前博斯克质量保证







Overview
The NGTB20N135IHRWG is IGBT 1350V 40A 394W TO247, that includes NGTB20N135IHR Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.229281 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247, the device is offered in Single Configuration, the device has a 394W of Power Max, and Current Collector Ic Max is 40A, and the Voltage Collector Emitter Breakdown Max is 1350V, and IGBT Type is Trench Field Stop, and the Current Collector Pulsed Icm is 120A, and Vce on Max Vge Ic is 2.65V @ 15V, 20A, and the Switching Energy is 600μJ (off), and Gate Charge is 234nC, and the Td on off 25°C is -/245ns, and Test Condition is 600V, 20A, 10 Ohm, 15V, and the Pd Power Dissipation is 394 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 40 C, and Collector Emitter Voltage VCEO Max is 1350 V, and the Collector Emitter Saturation Voltage is 2.2 V, and Continuous Collector Current at 25 C is 40 A, and the Gate Emitter Leakage Current is 100 nA, and Maximum Gate Emitter Voltage is 25 V.
NGTB25N120FL2WG with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-247-3 Package Case, Supplier Device Package is shown on datasheet note for use in a TO-247-3, that offers Mounting Type features such as Through Hole, Input Type is designed to work in Standard, as well as the Field Stop IGBT Type, the device can also be used as 87ns/179ns Td on off 25°C. In addition, the Test Condition is 600V, 25A, 10 Ohm, 15V, the device is offered in 50A Current Collector Ic Max, the device has a 385W of Power Max, and Vce on Max Vge Ic is 2.4V @ 15V, 25A, and the Gate Charge is 178nC, and Reverse Recovery Time trr is 154ns, and the Voltage Collector Emitter Breakdown Max is 1200V, and Current Collector Pulsed Icm is 100A, and the Switching Energy is 1.95mJ (on), 600μJ (off).
Features
Tube PackageExtremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
Pb?Free Devices
No SVHC
Lead Free
Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
- 起步价为$40,南非、巴西、印度、巴基斯坦、以色列等国家的价格会有所变动,详情请咨询相关客服人员。
- 包裹重量≤0.5kg的基本运费根据时区和国家而定。
- 我们的产品目前使用DHL,顺丰和UPS运输。如果数量少,则选择联邦快递。
- 一旦发货,预期交货时间跟选择的运输方式有所变动。
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onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。
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