ON NJVMJD31CT4G-VF01

NPN3 A100 V

Overview

The NJVMJD31CT4G is Bipolar Transistors - BJT BIP NPN 3A 100V TR, that includes MJD31C Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.009185 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in DPAK, as well as the 15 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 40 V Collector Emitter Voltage VCEO Max, the device has a NPN of Transistor Polarity, and Emitter Base Voltage VEBO is 5 V, and the Continuous Collector Current is 3 A, and DC Collector Base Gain hfe Min is 10.

NJVMJD31CRLG with EDA / CAD Models, that includes Reel Packaging, they are designed to operate with a MJD31C Series.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz

DPAK Supplier Device Package

Applications

There are a lot of ON Semiconductor
NJVMJD31CT4G-VF01 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting