
ON NGTB40N120LWG
1200 V80 A5.5mJ(开),1.4mJ(关)-55°C ~ 150°C(TJ)TO-247-3
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Overview
The NGTB40N120FLWG is IGBT 1200V 40A TO247, that includes NGTB40N120FL Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.229281 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247, the device is offered in Single Configuration, the device has a 260W of Power Max, and Reverse Recovery Time trr is 200ns, and the Current Collector Ic Max is 80A, and Voltage Collector Emitter Breakdown Max is 1200V, and the IGBT Type is Trench Field Stop, and Current Collector Pulsed Icm is 160A, and the Vce on Max Vge Ic is 2.2V @ 15V, 40A, and Switching Energy is 2.6mJ (on), 1.6mJ (off), and the Gate Charge is 415nC, and Td on off 25°C is 130ns/385ns, and the Test Condition is 600V, 40A, 10 Ohm, 15V, and Pd Power Dissipation is 260 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 1200 V, and Collector Emitter Saturation Voltage is 2 V, and the Continuous Collector Current at 25 C is 80 A, and Gate Emitter Leakage Current is 200 nA, and the Maximum Gate Emitter Voltage is 25 V.
NGTB40N120IHRWG with circuit diagram, that includes 2.3 V Collector Emitter Saturation Voltage, they are designed to operate with a 1200 V Collector Emitter Voltage VCEO Max, Configuration is shown on datasheet note for use in a Single, that offers Continuous Collector Current at 25 C features such as 80 A, Current Collector Ic Max is designed to work in 80A, as well as the 120A Current Collector Pulsed Icm, the device can also be used as 225nC Gate Charge. In addition, the Gate Emitter Leakage Current is 100 nA, the device is offered in Trench Field Stop IGBT Type, the device has a Standard of Input Type, and Maximum Gate Emitter Voltage is 25 V, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 40 C, and the Mounting Type is Through Hole, and Mounting Style is Through Hole, and the Package Case is TO-247-3, and Packaging is Tube, and the Pd Power Dissipation is 384 W, and Power Max is 384W, and the Series is NGTB40N120IHR, and Supplier Device Package is TO-247, and the Switching Energy is 950μJ (off), and Td on off 25°C is -/230ns, and the Test Condition is 600V, 40A, 10 Ohm, 15V, and Unit Weight is 0.229281 oz, and the Vce on Max Vge Ic is 2.55V @ 15V, 40A, and Voltage Collector Emitter Breakdown Max is 1200V.
Features
Tube PackageTrench Field Stop IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
80 A Current - Collector (Ic) (Max)
320 A Current - Collector Pulsed (Icm)
2.35V @ 15V, 40A Vce(on) (Max) @ Vge, Ic
260 W Power - Max
5.5mJ (on), 1.4mJ (off) Switching Energy
Standard Input Type
420 nC Gate Charge
140ns/360ns Td (on/off) @ 25°C
600V, 40A, 10Ohm, 15V Test Condition
Through Hole Mounting Type
- 起步价为$40,南非、巴西、印度、巴基斯坦、以色列等国家的价格会有所变动,详情请咨询相关客服人员。
- 包裹重量≤0.5kg的基本运费根据时区和国家而定。
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onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。
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