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FDR8702H

ON FDR8702H

MOSFET(金属氧化物)逻辑电平门N 和 P 沟道20V3.6A,2.6A38 毫欧 @ 3.6A,4.5V1.5V @ 250µA

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FDR8702H
MOSFET N/P-CH 20V SSOT-8
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产品详情

Overview

The FDR8521L is MOSFET P-CHAN 20V SSOT-8, that includes Digi-ReelR Packaging, they are designed to operate with a 8-SMD, Gull Wing Package Case, Input Type is shown on datasheet note for use in a Non-Inverting, it has an Operating Temperature range of -55°C ~ 150°C (TJ), Output Type is designed to work in P-Channel, as well as the On/Off Interface, the device can also be used as SuperSOT?-8 Supplier Device Package. In addition, the Ratio Input:Output is 1899/12/30 1:01:00, the device is offered in 1 Number of Outputs, the device has a Not Required of Voltage Supply Vcc Vdd, and Output Configuration is High Side, and the Rds On Typ is 54 mOhm, and Voltage Load is 3 V ~ 20 V, and the Current Output Max is 2.9A, and Switch Type is General Purpose.

The FDR858P is MOSFET P-CH 30V 8A SSOT-8 manufactured by FAI. The FDR858P is available in 8-SSOT, SuperSOT-8 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 30V 8A SSOT-8, P-Channel 30V 8A (Ta) 1.8W (Ta) Surface Mount SuperSOT?-8.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
3.6A, 2.6A Current - Continuous Drain (Id) @ 25°C
38mOhm @ 3.6A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
10nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
650pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
800mW Power - Max
Surface Mount Mounting Type
产品属性
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型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: N 和 P 沟道
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 3.6A,2.6A
漏极电流和栅极至源极电压下的最大导通电阻: 38 毫欧 @ 3.6A,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 10nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 650pF @ 10V
最大功率: 800mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-LSOP(0.130",3.30mm 宽)
供应商器件封装: SuperSOT™-8
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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