ON FDR8308P

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V3.2A50 毫欧 @ 3.2A，4.5V1.5V @ 250µA

Overview

The FDR8305N is MOSFET 2N-CH 20V 4.5A SSOT-8, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-SMD, Gull Wing, it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the SuperSOT?-8 Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 800mW, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 1600pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4.5A, and Rds On Max Id Vgs is 22 mOhm @ 4.5A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 23nC @ 4.5V.

FDR6678A with circuit diagram manufactured by FSC. The FDR6678A is available in VSOP8 Package, is part of the IC Chips.

Features

load switching

power management

battery charging circuits

DC/DC conversions.

Applications

-3.2A-20VR=0.050@V=4.5V

RO8ON=0.070@Va8=-2.5V

Low gate charge (13nC typical).

High performance trench technology for extremely low Rgeion

SuperSOT-8 package:small footprint(40% less than

So-8):lowprofile(1mmthick):maximumpower comparable to SO-8.