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FDC6036P_F077

ON FDC6036P_F077

MOSFET(金属氧化物)逻辑电平门2 个 P 沟道(双)20V5A44 毫欧 @ 5A,4.5V1.5V @ 250µA

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FDC6036P_F077
MOSFET 2P-CH 20V 5A 6SSOT
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产品详情

Overview

The FDC602P is MOSFET P-CH 20V 5.5A SSOT-6, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FDC602P_NL, that offers Unit Weight features such as 0.001270 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-6 Thin, TSOT-23-6 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SuperSOT?-6, and the Configuration is Single Quad Drain, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 800mW, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 1456pF @ 10V, and the FET Feature is Logic Level Gate, 2.5V Drive, and Current Continuous Drain Id 25°C is 5.5A (Ta), and the Rds On Max Id Vgs is 35 mOhm @ 5.5A, 4.5V, and Vgs th Max Id is 1.5V @ 250μA, and the Gate Charge Qg Vgs is 20nC @ 4.5V, and Pd Power Dissipation is 1.6 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 11 ns, and Rise Time is 11 ns, and the Vgs Gate Source Voltage is 12 V, and Id Continuous Drain Current is 5.5 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Rds On Drain Source Resistance is 35 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 57 ns, and the Typical Turn On Delay Time is 15 ns, and Forward Transconductance Min is 19 S, and the Channel Mode is Enhancement.

FDC602P-NL with circuit diagram manufactured by FAIRCHILD. The FDC602P-NL is available in SOT163 Package, is part of the IC Chips.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
5A Current - Continuous Drain (Id) @ 25°C
44mOhm @ 5A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
14nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
992pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 个 P 沟道(双)
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 5A
漏极电流和栅极至源极电压下的最大导通电阻: 44 毫欧 @ 5A,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 14nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 992pF @ 10V
最大功率: 900mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 6-SSOT 扁平引线,SuperSOT™-6 FLMP
供应商器件封装: SuperSOT™-6
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