ON FDC6020C

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V5.9A，4.2A27 毫欧 @ 5.9A，4.5V1.5V @ 250µA

Features

• Q1 –4.2 A, –20V. R_DS(ON) = 55 mΩ@ V_GS = – 4.5 V

•                              R_DS(ON) = 82 mΩ @ V_GS = – 2.5 V

• Q2 5.9 A, 20V. R_DS(ON) = 27 mΩ @ V_GS = 4.5 V

                          R_DS(ON) = 39 mΩ @ V_GS = 2.5 V

• Low gate charge

• High-performance trench technology for extremely low R_DS(ON).

• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

Applications

• DC/DC converter

• Load switch

• Motor Driving