Microsemi JANTX2N3439

NPN1 A350 V

Overview

The JANTX2N3421 is TRANS NPN 80V 3A TO-5, that includes Military, MIL-PRF-19500/393 Series, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-205AA, TO-5-3 Metal Can, Mounting Type is designed to work in Through Hole, as well as the TO-5 Supplier Device Package, the device can also be used as Single Configuration. In addition, the Power Max is 1W, the device is offered in NPN Transistor Type, the device has a 3A of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 80V, and the DC Current Gain hFE Min Ic Vce is 40 @ 1A, 2V, and Vce Saturation Max Ib Ic is 500mV @ 200mA, 2A, and the Current Collector Cutoff Max is 5μA, it has an Maximum Operating Temperature range of + 200 C, and the Collector Emitter Voltage VCEO Max is 80 V, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 500 mV, and Collector Base Voltage VCBO is 125 V, and the Emitter Base Voltage VEBO is 8 V, and Maximum DC Collector Current is 5 A.

The JANTX2N3421S is Bipolar Transistors - BJT NPN Transistor manufactured by Microsemi. The JANTX2N3421S is available in CAN Package, is part of the Transistors - Bipolar (BJT) - RF, , and with support for Bipolar Transistors - BJT NPN Transistor, Bipolar (BJT) Transistor NPN 80V 3A 1W Through Hole TO-39 (TO-205AD), Trans GP BJT NPN 80V 3A 3-Pin TO-39.

Features

Bulk Package
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz

Through Hole Mounting Type

Applications

There are a lot of Microsemi Corporation
JANTX2N3439 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting