Microsemi JANTX2N3019S

NPN1 A80 V

Overview

The Jantx2N3019 is Bipolar Transistors - BJT NPN Transistor, that includes Reel Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-5-3, that offers Configuration features such as Single, Pd Power Dissipation is designed to work in 800 mW, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C. In addition, the Collector Emitter Voltage VCEO Max is 80 VDC, the device is offered in NPN Transistor Polarity, the device has a 0.2 V of Collector Emitter Saturation Voltage, and Collector Base Voltage VCBO is 140 VDC, and the Emitter Base Voltage VEBO is 7 VDC, and Continuous Collector Current is 1 A, and the DC Collector Base Gain hfe Min is 15, and DC Current Gain hFE Max is 300 mA.

The JANTX2N2946A is TRANS PNP 35V 0.1A manufactured by MOT. The JANTX2N2946A is available in TO-46-3 Package, is part of the Transistors (BJT) - Single, , and with support for TRANS PNP 35V 0.1A, Bipolar (BJT) Transistor PNP 35V 100mA 400mW Through Hole TO-46 (TO-206AB), Trans GP BJT PNP 35V 0.1A 3-Pin TO-46, Bipolar Transistors - BJT PNP Transistor.

Features

Bulk Package
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V

Through Hole Mounting Type

Applications

There are a lot of Microsemi Corporation
JANTX2N3019S applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting