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APTDR40X1601G

Microsemi APTDR40X1601G

1.6 kV40 A-40°C ~ 150°C(TJ)SP1

比较
APTDR40X1601G
BRIDGE RECT 3PHASE 1.6KV 40A SP1
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比较

¥369.06

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The APTDF500U40G is DIODE MODULE 400V 500A LP4, that includes Bulk Packaging, they are designed to operate with a LP4 Package Case, Mounting Type is shown on datasheet note for use in a Chassis Mount, that offers Supplier Device Package features such as LP4, Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Standard Diode Type, the device can also be used as 2.5mA @ 400V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.5V @ 500A, the device is offered in 400V Voltage DC Reverse Vr Max, the device has a 500A of Current Average Rectified Io, and Reverse Recovery Time trr is 120ns.

The APTDF60H601G is DIODE MODULE FULL BRDG 600V SP1, that includes 92A Current DC Forward If Max, they are designed to operate with a Single Phase Diode Type, Mounting Type is shown on datasheet note for use in a Chassis Mount, that offers Package Case features such as SP1, Packaging is designed to work in Bulk, as well as the SP1 Supplier Device Package, the device can also be used as 600V Voltage Peak Reverse Max.

Features

Bulk Package
12 pin count
40A forward voltage
forward voltage of 40A
SP1 package
operating at a temperature of -40°C~150°C TJ

SP1 Supplier Device Package

Applications


There are a lot of Microsemi Corporation
APTDR40X1601G applications of bridge rectifiers.

  • Controlled avalanche characteristics
  • Working peak reverse voltages 200 to 1 ,000 volts
  • Military and other high-reliability applications
  • High forward surge current capability
  • Low thermal resistance
  • Extremely robust construction
  • Fuse-in-glass diodes design
  • Electrically isolated aluminum case
  • Motor controls – Low Voltage and Medium Voltage converters
  • SCR power bridges for solid state starters
产品属性
全选
包装: 散装
部件状态: 在售
二极管类型: Three Phase
技术: 标准
最大峰值反向电压: 1.6 kV
平均整流电流 (Io): 40 A
正向电流时的最大正向电压: 1.3 V @ 40 A
不同 Vr 时电流 - 反向泄漏: 20 µA @ 1600 V
工作温度: -40°C ~ 150°C(TJ)
安装类型: 底座安装
封装/外壳: SP1
供应商器件封装: SP1
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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